An indium oxide-based transistor created using atomic layer deposition

https://techxplore.com/news/2022-03-indium-oxide-based-transistor-atomic-layer.html

"atomic layer deposition to deposit thin indium oxide films on a substrate create highly performing transistors... channel lengths of 8 nm and thicknesses of 0.5nm... integrated into a variety of existing and newly developed devices... reduce their size and improve their performance... ultra-low contact resistance scaled device make the unprecedented drain current possible on BEOL compatible oxide semiconductor transistors... deliver drain currents of 10 mA/um or even 20 mA/um"

Related:

A method to reliably fabricate wafer-scale transition metal dichalcogenide field-effect transistors

https://techxplore.com/news/2023-01-method-reliably-fabricate-transition-metal.html

Precisely clarifying operating principle of an oxide-based memory device, for next-gen semiconductors
https://www.eurekalert.org/news-releases/1096675