Development of a diamond transistor with high hole mobility

https://techxplore.com/news/2022-02-diamond-transistor-high-hole-mobility.html

"gate insulator instead of conventionally used oxides (e.g., alumina), and by employing a new fabrication technique capable of preventing the surface of hydrogen-terminated diamond from being exposed to air. At high hole densities, the hole mobility of this FET was five times that of conventional FETs with oxide gate insulators... allows reduced conduction loss and higher operational speed"

Related: Are diamonds GaN's best friend? Revolutionizing transistor technology

https://phys.org/news/2023-12-diamonds-gan-friend-revolutionizing-transistor.html