Record-Breaking Hole Mobility Heralds a Flexible Future for Electronics

https://www.tsukuba.ac.jp/en/research-news/20211223140000.html

"Recent increases in grain size have therefore led to effective Ge thin-film transistors on rigid substrates such as glass... crystallinity was influenced by both the thickness of the GeOx layer and the temperature at which the Ge layer was grown... hole mobility of 690 cm2 V−1 s−1... high performance, combined with its flexibility, affordability, and portability, make it perfectly suited to the development of new flexible devices such as wearable electronics to support future digital initiatives such as the internet of things"