Magnetic tunnel junction technology for the angstrom semiconductor era

https://techxplore.com/news/2021-12-magnetic-tunnel-junction-technology-angstrom.html

"fast switching down to 3.5 ns in sub-five-nm ultra-small magnetic tunnel junctions (MTJs) can be achieved by engineering relaxation time, which governs fast magnetization dynamics. The established technology allows for the replacement of SRAM and high-speed DRAM with spintronic non-volatile memory—STT-MRAM... successfully fabricated down to 2.0 nm, or 20 Angstrom, in diameter (the world's smallest size), and fast switching beyond 10 ns was achieved in sub-five-nm MTJs"

Related:

TSMC starts volume production of 3nm chips

https://focustaiwan.tw/business/202212290013

ITRI and TSMC Collaborate on Advancing High-Speed Computing with SOT-MRAM

https://www.prnewswire.com/news-releases/itri-and-tsmc-collaborate-on-advancing-high-speed-computing-with-sot-mram-302036439.html