Capacitor-less IGZO-based DRAM cell with excellent retention, endurance and gate length scaling

https://www.imec-int.com/en/articles/capacitor-less-igzo-based-dram-cell-excellent-retention-endurance-and-gate-length-scaling

"Improvements to the IGZO-based DRAM cell architecture and integration have enabled 2T0C DRAM memory cells with >103 retention, unlimited endurance and gate length scaling down to 14nm. These specifications make capacitor-less IGZO-DRAM a suitable candidate for realizing high-density 3D DRAM memories... predicted time to failure can be enhanced from about 20 days to about one year"